Spin noise spectroscopy in GaAs.
نویسندگان
چکیده
We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in -doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.
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ورودعنوان ژورنال:
- Physical review letters
دوره 95 21 شماره
صفحات -
تاریخ انتشار 2005